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an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 mux50x 36-v, low-capacitance, low-charge-injection, precision, analog multiplexers 1 1 features 1 ? low on-capacitance ? mux508: 9.4 pf ? mux509: 6.7 pf ? low input leakage: 10 pa ? low charge injection: 0.3 pc ? rail-to-rail operation ? wide supply range: 5 v to 18 v, 10 v to 36 v ? low on-resistance: 125 ? transition time: 92 ns ? break-before-make switching action ? en pin connectable to v dd ? logic levels: 2 v to v dd ? low supply current: 45 a ? esd protection hbm: 2000 v ? industry-standard tssop and soic packages 2 applications ? factory automation and industrial process controls ? programmable logic controllers (plc) ? analog input modules ? ate test equipment ? digital multimeters ? battery monitoring systems 3 description the mux508 and mux509 (mux50x) are modern, complementary metal-oxide semiconductor (cmos), analog multiplexers (muxes). the mux508 offers 8:1 single-ended channels, whereas the mux509 offers differential 4:1 or dual 4:1 single-ended channels . the mux508 and mux509 work equally well with either dual supplies ( 5 v to 18 v) or a single supply (10 v to 36 v). they also perform well with symmetric supplies (such as v dd = 12 v, v ss = ? 12 v), and unsymmetric supplies (such as v dd = 12 v, v ss = ? 5 v). all digital inputs have ttl-logic compatible thresholds, ensuring both ttl and cmos logic compatibility when operating in the valid supply voltage range. the mux508 and mux509 have very low on and off leakage currents, allowing these multiplexers to switch signals from high input impedance sources with minimal error. a low supply current of 45 a allows for use in portable applications. device information (1) part number package body size (nom) mux50x tssop (16) 5.00 mm 4.40 mm soic (16) 9.90 mm 3.91 mm (1) for all available packages, see the package option addendum at the end of the data sheet. simplified schematic charge injection vs source voltage adc v inp v inm analog inputs led photo detector bridge sensor thermocouple current sensing optical sensor pga/ina + mux509 copyright ? 2016, texas instruments incorporated 2 1 0 1 2 15 10 5 0 5 10 15 charge injection (pc) source voltage (v) c008 v dd = 12 v v ss = 0 v v dd = 10 v v ss = 10 v v dd = 15 v v ss = 15 v productfolder sample &buy technical documents tools & software referencedesign support &community
2 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated table of contents 1 features .................................................................. 1 2 applications ........................................................... 1 3 description ............................................................. 1 4 revision history ..................................................... 2 5 device comparison table ..................................... 4 6 pin configuration and functions ......................... 4 7 specifications ......................................................... 6 7.1 absolute maximum ratings ...................................... 6 7.2 esd ratings .............................................................. 6 7.3 recommended operating conditions ....................... 6 7.4 thermal information .................................................. 7 7.5 electrical characteristics: dual supply ..................... 7 7.6 electrical characteristics: single supply ................... 9 7.7 typical characteristics ............................................ 11 8 parameter measurement information ................ 15 8.1 truth tables ............................................................ 15 8.2 on-resistance ........................................................ 16 8.3 off-leakage current ............................................... 16 8.4 on-leakage current ............................................... 17 8.5 transition time ....................................................... 17 8.6 break-before-make delay ....................................... 18 8.7 turn-on and turn-off time .................................... 19 8.8 charge injection ...................................................... 20 8.9 off isolation ............................................................. 21 8.10 channel-to-channel crosstalk .............................. 21 8.11 bandwidth ............................................................. 22 8.12 thd + noise ......................................................... 22 9 detailed description ............................................ 23 9.1 overview ................................................................. 23 9.2 functional block diagram ....................................... 23 9.3 feature description ................................................. 24 9.4 device functional modes ........................................ 26 10 applications and implementation ...................... 27 10.1 application information .......................................... 27 10.2 typical application ............................................... 27 11 power-supply recommendations ..................... 29 12 layout ................................................................... 30 12.1 layout guidelines ................................................. 30 12.2 layout example .................................................... 30 13 device and documentation support ................. 31 13.1 documentation support ........................................ 31 13.2 related links ........................................................ 31 13.3 receiving notification of documentation updates 31 13.4 community resources .......................................... 31 13.5 trademarks ........................................................... 31 13.6 electrostatic discharge caution ............................ 31 13.7 glossary ................................................................ 31 14 mechanical, packaging, and orderable information ........................................................... 32 4 revision history note: page numbers for previous revisions may differ from page numbers in the current version. changes from revision b (july 2016) to revision c page ? added d (soic) package to document .................................................................................................................................. 1 ? changed last features bullet to include soic package ........................................................................................................ 1 ? changed second sentence of description section ................................................................................................................. 1 ? added soic package to device information table ................................................................................................................ 1 ? changed mux509 description in device comparison table ................................................................................................. 4 ? added d package to pin configuration and functions section .............................................................................................. 4 ? added d package to thermal information table .................................................................................................................... 7 ? changed analog switch, i d parameter in electrical characteristics: dual supply table: split parameter into i d(off) and i d(on) parameters, changed symbols, parameter names, and test conditions ........................................................................ 7 ? changed on-resistance drift parameter in electrical characteristics: single supply table: changed v s value in test conditions ................................................................................................................................................................................ 9 ? changed analog switch, i d parameter in electrical characteristics: single supply table: split parameter into i d(off) and i d(on) parameters, changed symbols, parameter names, and i d(on) test conditions ........................................................ 9 ? changed figure 26 : changed switch symbol to a closed switch symbol ............................................................................. 16 ? changed figure 32 : added 0 v line, flipped v s supply symbol ............................................................................................ 20 ? changed description of mux509 in overview section ........................................................................................................ 23 ? changed figure 42 : changed opa140 amplifier and charge kickback filter box ................................................................. 27 ? added d package description to layout guidelines section ................................................................................................ 30
3 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated changes from revision a (march 2016) to revision b page ? added ti design .................................................................................................................................................................... 1 ? changed analog switch, i s(off) and i d parameter specifications in electrical characteristics: single supply table .............. 9 changes from original (january 2016) to revision a page ? changed from product preview to production data ................................................................................................................ 1
4 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 5 device comparison table product description mux508 8-channel, single-ended analog multiplexer (8:1 mux) mux509 4-channel differential or dual 4:1 single-ended analog multiplexer (8:2 mux) 6 pin configuration and functions mux508: pw and d packages 16-pin tssop and soic top view pin functions: mux508 pin type description name no. a0 1 digital input address line 0 a1 16 digital input address line 1 a2 15 digital input address line 2 d 8 analog input or output drain pin. can be an input or output. en 2 digital input active high digital input. when this pin is low, all switches are turned off. when this pin is high, the a[2:0] logic inputs determine which switch is turned on. gnd 14 power supply ground (0 v) reference s1 4 analog input or output source pin 1. can be an input or output. s2 5 analog input or output source pin 2. can be an input or output. s3 6 analog input or output source pin 3. can be an input or output. s4 7 analog input or output source pin 4. can be an input or output. s5 12 analog input or output source pin 5. can be an input or output. s6 11 analog input or output source pin 6. can be an input or output. s7 10 analog input or output source pin 7. can be an input or output. s8 9 analog input or output source pin 8. can be an input or output. vdd 13 power supply positive power supply. this pin is the most positive power-supply potential. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vdd and gnd. vss 3 power supply negative power supply. this pin is the most negative power-supply potential. in single- supply applications, this pin can be connected to ground. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vss and gnd. 1 a0 16 a1 2 en 15 a2 3 vss 14 gnd 4 s1 13 vdd 5 s2 12 s5 6 s3 11 s6 7 s4 10 s7 8 d 9 s8
5 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated mux509: pw and d packages 16-pin tssop and soic top view pin functions: mux509 pin type description name no. a0 1 digital input address line 0 a1 16 digital input address line 1 da 8 analog input or output drain pin a. can be an input or output. db 9 analog input or output drain pin b. can be an input or output. en 2 digital input active high digital input. when this pin is low, all switches are turned off. when this pin is high, the a[1:0] logic inputs determine which pair of switches is turned on. gnd 15 power supply ground (0 v) reference s1a 4 analog input or output source pin 1a. can be an input or output. s2a 5 analog input or output source pin 2a. can be an input or output. s3a 6 analog input or output source pin 3a. can be an input or output. s4a 7 analog input or output source pin 4a. can be an input or output. s1b 13 analog input or output source pin 1b. can be an input or output. s2b 12 analog input or output source pin 2b. can be an input or output. s3b 11 analog input or output source pin 3b. can be an input or output. s4b 10 analog input or output source pin 4b. can be an input or output. vdd 14 power supply positive power supply. this pin is the most positive power supply potential. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vdd and gnd. vss 3 power supply negative power supply. this pin is the most negative power supply potential. in single- supply applications, this pin can be connected to ground. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vss and gnd. 1 a0 16 a1 2 en 15 gnd 3 vss 14 vdd 4 s1a 13 s1b 5 s2a 12 s2b 6 s3a 11 s3b 7 s4a 10 s4b 8 da 9 db
6 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions . exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) only one pin at a time 7 specifications 7.1 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (1) min max unit supply voltage v dd ? 0.3 40 v v ss ? 40 0.3 v dd ? v ss 40 digital input pins (2) en, a0, a1, a2 pins voltage v ss ? 0.3 v dd + 0.3 v current ? 30 30 ma analog input pins (2) sx, sxa, sxb pins voltage v ss ? 2 v dd + 2 v current ? 30 30 ma analog output pins (2) d, da, db pins voltage v ss ? 2 v dd + 2 v current ? 30 30 ma temperature operating, t a ? 55 150 c junction, t j 150 storage, t stg ? 65 150 (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v cdm allows safe manufacturing with a standard esd control process. 7.2 esd ratings value unit v (esd) electrostatic discharge human-body model (hbm), per ansi/esda/jedec js-001 (1) 2000 v charged-device model (cdm), per jedec specification jesd22-c101 (2) 500 (1) when v ss = 0 v, v dd can range from 10 v to 36 v. (2) v dd and v ss can be any value as long as 10 v (v dd ? v ss ) 36 v, and v dd 5 v. (3) v s is the voltage on all the s pins. 7.3 recommended operating conditions min nom max unit v dd (1) positive power-supply voltage dual supply 5 18 v single supply 10 36 v ss (2) negative power-supply voltage (dual supply) ? 5 ? 18 v v dd ? v ss supply voltage 10 36 v v s source pins voltage (3) v ss v dd v v d drain pins voltage v ss v dd v v en enable pin voltage v ss v dd v v a address pins voltage v ss v dd v i ch channel current (t a = 25 c) ? 25 25 ma t a operating temperature ? 40 125 c
7 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) for more information about traditional and new thermal metrics, see the semiconductor and ic package thermal metrics . 7.4 thermal information thermal metric (1) mux50x unit pw (tssop) d (soic) 16 pins 16 pins r ja junction-to-ambient thermal resistance 103.8 78.3 c/w r jc(top) junction-to-case (top) thermal resistance 36.8 37.2 c/w r jb junction-to-board thermal resistance 49.8 35.7 c/w jt junction-to-top characterization parameter 2.7 8.2 c/w jb junction-to-board characterization parameter 49.1 35.4 c/w r jc(bot) junction-to-case (bottom) thermal resistance n/a n/a c/w (1) when v s is positive, v d is negative, and vice versa. 7.5 electrical characteristics: dual supply at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) parameter test conditions min typ max unit analog switch analog signal range t a = ? 40 c to +125 c v ss v dd v r on on-resistance v s = 0 v, i ch = 1 ma 125 170 v s = 10 v, i ch = 1 ma 145 200 t a = ? 40 c to +85 c 230 t a = ? 40 c to +125 c 250 r on on-resistance mismatch between channels v s = 10 v, i ch = 1 ma 2.4 6 t a = ? 40 c to +85 c 9 t a = ? 40 c to +125 c 11 r flat on-resistance flatness v s = 10 v, 0 v, ? 10 v 22 45 t a = ? 40 c to +85 c 53 t a = ? 40 c to +125 c 58 on-resistance drift v s = 0 v 0.52 %/ c i s(off) input leakage current switch state is off, v s = 10 v, v d = 10 v (1) ? 1 0.01 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 25 25 i d(off) output off leakage current switch state is off, v s = 10 v, v d = 10 v (1) ? 1 0.01 1 na t a = -40 c to +85 c ? 10 10 t a = -40 c to +125 c ? 50 50 i d(on) output on leakage current switch state is on, v d = 10 v, v s = floating ? 1 0.01 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 50 50 logic input v ih high-level input voltage 2.0 v v il low-level input voltage 0.8 v i d input current 0.15 a
8 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated electrical characteristics: dual supply (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) parameter test conditions min typ max unit (2) specified by design, not production tested. switch dynamics (2) t on enable turn-on time v s = 10 v, r l = 300 , c l = 35 pf 88 136 ns t a = ? 40 c to +85 c 144 t a = ? 40 c to +125 c 151 t off enable turn-off time v s = 10 v, r l = 300 , c l = 35 pf 63 75 ns t a = ? 40 c to +85 c 83 t a = ? 40 c to +125 c 90 t t transition time v s = 10 v, r l = 300 , c l = 35 pf, 92 143 ns t a = ? 40 c to +85 c 151 t a = ? 40 c to +125 c 157 t bbm break-before-make time delay v s = 10 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +125 c 30 54 ns q j charge injection c l = 1 nf, r s = 0 v s = 0 v 0.3 pc v s = ? 15 v to +15 v 0.6 off-isolation r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channel to d, da, db ? 96 db adjacent channel to d, da, db ? 85 channel-to-channel crosstalk r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channels ? 96 db adjacent channels ? 88 c s(off) input off-capacitance f = 1 mhz, v s = 0 v 2.4 2.9 pf c d(off) output off-capacitance f = 1 mhz, v s = 0 v mux508 7.5 8.4 pf mux509 4.3 5 c d(on) input/output on- capacitance f = 1 mhz, v s = 0 v mux508 9.4 10.6 pf mux509 6.7 7.7 power supply v dd supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v, 45 59 a t a = ? 40 c to +85 c 62 t a = ? 40 c to +125 c 83 v ss supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v, 25 34 a t a = ? 40 c to +85 c 37 t a = ? 40 c to +125 c 57
9 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) specified by design, not production tested. (2) when v s is 1 v, v d is 10 v, and vice versa. 7.6 electrical characteristics: single supply at t a = 25 c, v dd = 12 v, and v ss = 0 v (unless otherwise noted) (1) parameter test conditions min typ max unit analog switch analog signal range t a = ? 40 c to +125 c v ss v dd v r on on-resistance v s = 10 v, i ch = 1 ma 235 340 t a = ? 40 c to +85 c 390 t a = ? 40 c to +125 c 430 r on on-resistance match v s = 10 v, i ch = 1 ma 3.1 12 t a = ? 40 c to +85 c 19 t a = ? 40 c to +125 c 23 on-resistance drift v s = 10 v 0.47 %/ c i s(off) input leakage current switch state is off, v s = 1 v and v d = 10 v, or v s = 10 v and v d = 1 v (2) ? 1 0.01 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 25 25 i d(off) output off leakage current switch state is off, v s = 1 v and v d = 10 v, or v s = 10 v and v d = 1 v (2) ? 1 0.01 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 50 50 i d(on) output on leakage current switch state is on, v d = 1 v and 10 v, v s = floating ? 1 0.01 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 50 50 logic input v ih high-level input voltage 2.0 v v il low-level input voltage 0.8 v i d input current 0.15 a switch dynamic characteristics t on enable turn-on time v s = 8 v, r l = 300 , c l = 35 pf 85 140 ns t a = ? 40 c to +85 c 145 t a = ? 40 c to +125 c 149 t off enable turn-off time v s = 8 v, r l = 300 , c l = 35 pf 48 83 ns t a = ? 40 c to +85 c 94 t a = ? 40 c to +125 c 102 t t transition time v s = 8 v, c l = 35 pf 87 147 ns v s = 8 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +85 c 153 v s = 8 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +125 c 155 t bbm break-before-make time delay v s = 8 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +125 c 30 54 ns q j charge injection c l = 1 nf, r s = 0 v s = 6 v 0.15 pc v s = 0 v to 12 v, 0.4 off-isolation r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channel to d, da, db -96 db adjacent channel to d, da, db -85 channel-to-channel crosstalk r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channels ? 96 db adjacent channels -88 c s(off) input off-capacitance f = 1 mhz, v s = 6 v 2.7 3.2 pf c d(off) output off-capacitance f = 1 mhz, v s = 6 v mux508 9.1 10 pf mux509 5 5.7 c d(on) input/output on- capacitance f = 1 mhz, v s = 6 v mux508 10.8 12 pf mux509 6.9 8
10 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated electrical characteristics: single supply (continued) at t a = 25 c, v dd = 12 v, and v ss = 0 v (unless otherwise noted) (1) parameter test conditions min typ max unit power supply v dd supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v 42 53 a t a = ? 40 c to +85 c 56 t a = ? 40 c to +125 c 77 v ss supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v 23 38 a t a = ? 40 c to +85 c 31 t a = ? 40 c to +125 c 51
11 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.7 typical characteristics at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) figure 1. on-resistance vs source or drain voltage v dd = 15 v, v ss = ? 15 v figure 2. on-resistance vs source or drain voltage figure 3. on-resistance vs source or drain voltage v dd = 12 v, v ss = 0 v figure 4. on-resistance vs source or drain voltage figure 5. on-resistance vs source or drain voltage figure 6. on-resistance vs source or drain voltage 0 50 100 150 200 250 0 6 12 18 24 30 36 on resistance ( ? ) source or drain voltage (v) c023 v dd = 30 v v ss = 0 v v dd = 33 v v ss = 0 v v dd = 36 v v ss = 0 v 0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 14 on resistance ( ? ) source or drain voltage (v) c005 v dd = 14 v v ss = 0 v v dd = 12 v v ss = 0 v v dd = 10 v v ss = 0 v 0 100 200 300 400 500 600 700 8 6 4 2 0 2 4 6 8 on resistance ( ? ) source or drain voltage (v) c003 v dd = 5 v v ss = 5 v v dd = 6 v v ss = 6 v v dd = 7 v v ss = 7 v 0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 on resistance ( ? ) source or drain voltage (v) c004 t a = 40 ? c t a = 0 ? c t a = 125 ? c t a = 85 ? c t a = 25 ? c 0 50 100 150 200 250 20 15 10 5 0 5 10 15 20 on resistance ( ? ) source or drain voltage (v) c001 v dd = 15 v v ss = 15 v v dd = 18 v v ss = 18 v v dd = 16.5 v v ss = 16.5 v v dd = 13.5 v v ss = 13.5 v 0 50 100 150 200 250 18 12 6 0 6 12 18 on resistance ( ? ) source or drain voltage (v) c002 t a = 40 ? c t a = 0 ? c t a = 125 ? c t a = 85 ? c t a = 25 ? c
12 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) v dd = 24 v, v ss = 0 v figure 7. on-resistance vs source or drain voltage v dd = 12 v, v ss = ? 12 v figure 8. on-resistance vs source or drain voltage v dd = 15 v, v ss = ? 15 v figure 9. leakage current vs temperature v dd = 12 v, v ss = 0 v figure 10. leakage current vs temperature mux508, source-to-drain figure 11. charge injection vs source voltage mux509, source-to-drain figure 12. charge injection vs source voltage 2 1 0 1 2 15 10 5 0 5 10 15 charge injection (pc) source voltage (v) c008 v dd = 12 v v ss = 0 v v dd = 10 v v ss = 10 v v dd = 15 v v ss = 15 v 2 1 0 1 2 15 10 5 0 5 10 15 charge injection (pc) source voltage (v) c025 v dd = 12 v v ss = 0 v v dd = 10 v v ss = 10 v v dd = 15 v v ss = 15 v 900 600 300 0 300 600 900 75 50 25 0 25 50 75 100 125 150 leakage current (pa) temperature ( ? c) c006 i d(on)+ i d(off)+ i s(off)+ i s(off) i d(off) i d(on) 900 600 300 0 300 600 900 75 50 25 0 25 50 75 100 125 150 leakage current (pa) temperature ( ? c) c007 i s(off)+ i d(off)+ i d(on)+ i s(off) i d(off) i d(on) 0 50 100 150 200 250 0 6 12 18 24 on resistance ( ? ) source or drain voltage (v) c029 0 50 100 150 200 250 12 6 0 6 12 on resistance ( ? ) source or drain voltage (v) c024
13 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) drain-to-source figure 13. charge injection vs source or drain voltage figure 14. turn-on and turn-off times vs temperature figure 15. off isolation vs frequency figure 16. crosstalk vs frequency figure 17. thd+n vs frequency figure 18. on response vs frequency 0.01 0.1 1 10 100 10 100 1k 10k 100k thd+n (%) frequency (hz) c014 v dd = 15 v v ss = 15 v v dd = 5 v v ss = 5 v 9 6 3 0 3 100k 1m 10m 100m 1g on response (db) frequency (hz) c018 140 120 100 80 60 40 20 0 10k 100k 1m 10m 100m 1g off isolation (db) frequency (hz) c012 non-adjacent channel to d (output) adjacent channel to d (output) 140 120 100 80 60 40 20 0 10k 100k 1m 10m 100m 1g crosstalk (db) frequency (hz) c013 non-adjacent channels adjacent channels 9 6 3 0 3 6 9 15 10 5 0 5 10 15 charge injection (pc) drain voltage (v) c011 v dd = 12 v v ss = 0 v v dd = 10 v v ss = 10 v v dd = 15 v v ss = 15 v 0 30 60 90 120 150 75 50 25 0 25 50 75 100 125 150 turn on and turn off times (ns) temperature ( ? c) c010 t off (v dd = 15 v, v ss = 15 v) t on (v dd = 15 v, v ss = 15 v) t off (v dd = 12 v, v ss = 0 v) t on (v dd = 12 v, v ss = 0 v)
14 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) mux508, v dd = 15 v, v ss = ? 15 v figure 19. capacitance vs source voltage mux509, v dd = 15 v, v ss = ? 15 v figure 20. capacitance vs source voltage mux508, v dd = 30 v, v ss = 0 v figure 21. capacitance vs source voltage mux509, v dd = 30 v, v ss = 0 v figure 22. capacitance vs source voltage mux508, v dd = 12 v, v ss = 0 v figure 23. capacitance vs source voltage mux509, v dd = 12 v, v ss = 0 v figure 24. capacitance vs source voltage 0 3 6 9 12 15 18 15 10 5 0 5 10 15 capacitance (pf) source or drain voltage (v) c026 c d(off ) c d(on ) c s(off) 0 3 6 9 12 15 18 0 3 6 9 12 capacitance (pf) source or drain voltage (v) c022 c d(off) c d(on) c s(off) 0 3 6 9 12 15 18 0 3 6 9 12 capacitance (pf) source or drain voltage (v) c027 c d(off ) c d(on ) c s(off) 0 3 6 9 12 15 18 0 5 10 15 20 25 30 capacitance (pf) source voltage (v) c016 c d(off ) c d(on ) c s(off) 0 3 6 9 12 15 18 0 5 10 15 20 25 30 capacitance (pf) source or drain voltage (v) c028 c d(off ) c d(on ) c s(off) 0 3 6 9 12 15 18 15 10 5 0 5 10 15 capacitance (pf) source voltage (v) c015 c d(off ) c d(on ) c s(off)
15 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) figure 25. source current vs drain current 8 parameter measurement information 8.1 truth tables table 1 and table 2 show the truth tables for the mux508 and mux509, respectively. (1) x denotes don ' t care .. table 1. mux508 truth table en a2 a1 a0 state 0 x (1) x (1) x (1) all channels are off 1 0 0 0 channel 1 on 1 0 0 1 channel 2 on 1 0 1 0 channel 3 on 1 0 1 1 channel 4 on 1 1 0 0 channel 5 on 1 1 0 1 channel 6 on 1 1 1 0 channel 7 on 1 1 1 1 channel 8 on (1) x denotes don ' t care . table 2. mux509 truth table en a1 a0 state 0 x (1) x (1) all channels are off 1 0 0 channels 1a and 1b on 1 0 1 channels 2a and 2b on 1 1 0 channels 3a and 3b on 1 1 1 channels 4a and 4b on 25 20 15 10 5 0 5 10 15 20 25 25 20 15 10 5 0 5 10 15 20 25 drain current (ma) source current (ma) c021
16 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.2 on-resistance the on-resistance of the mux50x is the ohmic resistance across the source (sx, sxa, or sxb) and drain (d, da, or db) pins of the device. the on-resistance varies with input voltage and supply voltage. the symbol r on is used to denote on-resistance. the measurement setup used to measure r on is shown in figure 26 . voltage (v) and current (i ch ) are measured using this setup, and r on is computed as shown in equation 1 . figure 26. on-resistance measurement setup r on = v / i ch (1) 8.3 off-leakage current there are two types of leakage currents associated with a switch during the off state: 1. source off-leakage current 2. drain off-leakage current source off-leakage current is defined as the leakage current flowing into or out of the source pin when the switch is off. this current is denoted by the symbol i s(off) . drain off-leakage current is defined as the leakage current flowing into or out of the drain pin when the switch is off. this current is denoted by the symbol i d(off) . the setup used to measure both types of off-leakage currents is shown in figure 27 . figure 27. off-leakage measurement setup d v s v d a a i d (off) i s (off) s v d v s i ch s
17 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.4 on-leakage current on-leakage current is defined as the leakage current that flows into or out of the drain pin when the switch is in the on state. the source pin is left floating during the measurement. figure 28 shows the circuit used for measuring the on-leakage current, denoted by i d(on) . figure 28. on-leakage measurement setup 8.5 transition time transition time is defined as the time taken by the output of the mux50x to rise or fall to 90% of the transition after the digital address signal has fallen or risen to the 50% of the transition. figure 29 shows the setup used to measure transition time, denoted by the symbol t t . figure 29. transition-time measurement setup 50% 50% t t 90% 90% output address signal (v in ) 3 v v in v dd vdd v ss vss v s1 v s8 300 ? 35 pf 2 v mux508 en a0 a1 a2 s1 s2-s7 s8 d gnd v s8 v s1 output 0 v t t copyright ? 2016, texas instruments incorporated d v d s a i d (on) nc nc = no connection
18 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.6 break-before-make delay break-before-make delay is a safety feature that prevents two inputs from connecting when the mux50x is switching. the mux50x output first breaks from the on-state switch before making the connection with the next on-state switch. the time delay between the break and the make is known as a break-before-make delay. figure 30 shows the setup used to measure break-before-make delay, denoted by the symbol t bbm . figure 30. break-before-make delay measurement setup v in v dd vdd v ss vss v s output 300 ? 35 pf 2 v mux508 en a0 a1 a2 s1 s2-s7 s8 d gnd 3 v address signal (v in ) 0 v output t bbm 80% 80% copyright ? 2016, texas instruments incorporated
19 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.7 turn-on and turn-off time turn-on time is defined as the time taken by the output of the mux50x to rise to a 90% final value after the enable signal has risen to a 50% final value. figure 31 shows the setup used to measure turn-on time. turn-on time is denoted by the symbol t on . turn-off time is defined as the time taken by the output of the mux50x to fall to a 10% initial value after the enable signal has fallen to a 50% initial value. figure 31 shows the setup used to measure turn-off time. turn-off time is denoted by the symbol t off . figure 31. turn-on and turn-off time measurement setup v dd vdd v ss vss v s output 300 ? 35 pf mux508 en a0 a1 a2 s1 s2-s8 d gnd v in 3 v enable drive (v in ) 0 v 50% 50% t on (en) t off (en) 0.1 v s 0.9 v s output copyright ? 2016, texas instruments incorporated
20 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.8 charge injection the mux50x have a simple transmission-gate topology. any mismatch in capacitance between the nmos and pmos transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. the amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol q inj . figure 32 shows the setup used to measure charge injection. figure 32. charge-injection measurement setup vdd vss mux508 a0 a1 a2 v en r s v s en s gnd c l 1 nf d v out v out v en 3 v v out q inj = c l v out v dd v ss copyright ? 2016, texas instruments incorporated 0 v
21 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.9 off isolation off isolation is defined as the voltage at the drain pin (d, da, or db) of the mux50x when a 1-v rms signal is applied to the source pin (sx, sxa, or sxb) of an off-channel. figure 33 shows the setup used to measure off isolation. use equation 2 to compute off isolation. figure 33. off isolation measurement setup (2) 8.10 channel-to-channel crosstalk channel-to-channel crosstalk is defined as the voltage at the source pin (sx, sxa, or sxb) of an off-channel, when a 1-v rms signal is applied at the source pin of an on-channel. figure 34 shows the setup used to measure, and equation 3 is the equation used to compute, channel-to-channel crosstalk. figure 34. channel-to-channel crosstalk measurement setup (3) out s v off isolation 20 log v ? ? ? 1 v dd v ss network analyzer v out s d 50 ? v s vdd vss 0.1 f 0.1 f gnd r l 50 ? 50 out s v channel-to-channel crosstalk 20 log v ? ? ? 1 network analyzer s1 s2 v s v out v dd vdd v ss vss 0.1 f 0.1 f r l 50 ? r 50 ? gnd
22 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.11 bandwidth bandwidth is defined as the range of frequencies that are attenuated by < 3 db when the input is applied to the source pin of an on-channel and the output is measured at the drain pin of the mux50x. figure 35 shows the setup used to measure bandwidth of the mux. use equation 4 to compute the attenuation. figure 35. bandwidth measurement setup (4) 8.12 thd + noise the total harmonic distortion (thd) of a signal is defined as the ratio of the sum of the powers of all harmonic components to the power of the fundamental frequency at the mux output. the on-resistance of the mux50x varies with the amplitude of the input signal and results in distortion when the drain pin is connected to a low- impedance load. total harmonic distortion plus noise is denoted as thd+n. figure 36 shows the setup used to measure the thd+n of the mux50x. figure 36. thd+n measurement setup v dd vdd v ss vss gnd 0.1 f audio precision v out s d v s 5 vrms r l 10 n? in v in r s 0.1 f 2 1 v attenuation 20 log v ? ? ? 1 network analyzer v out s d v s v 1 v 2 v dd vdd v ss vss 0.1 f 0.1 f r l 50 ? 50 gnd
23 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 9 detailed description 9.1 overview the mux50x are a family of analog multiplexers. the functional block diagram section provides a top-level block diagram of both the mux508 and mux509. the mux508 is an eight-channel, single-ended, analog mux. the mux509 is a four-channel, differential or dual 4:1, single-ended, analog mux . each channel is turned on or turned off based on the state of the address lines and enable pin. 9.2 functional block diagram s1s2 s3 s8 a0 a1 a2 d en 1-of-8 decoder mux508 s4 s5s6 s7 a0 a1 db en 1-of-4 decoder mux509 s1a s2a s3a s4b s4a s1b s2b s3b da copyright ? 2016, texas instruments incorporated
24 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 9.3 feature description 9.3.1 ultralow leakage current the mux50x provide extremely low on- and off-leakage currents. the mux50x are capable of switching signals from high source-impedance inputs into a high input-impedance op amp with minimal offset error because of these ultralow leakage currents. figure 37 shows typical leakage currents of the mux50x versus temperature. figure 37. leakage current vs temperature 9.3.2 ultralow charge injection the mux50x have a simple transmission gate topology, as shown in figure 38 . any mismatch in the stray capacitance associated with the nmos and pmos transistors creates an output level change whenever the switch is opened or closed. figure 38. transmission gate topology s d c gdp c gdn c gsn c gsp off on off on 900 600 300 0 300 600 900 75 50 25 0 25 50 75 100 125 150 leakage current (pa) temperature ( ? c) c006 i d(on)+ i d(off)+ i s(off)+ i s(off) i d(off) i d(on)
25 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated feature description (continued) the mux50x have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to as low as 0.3 pc at v s = 0 v, and 0.6 pc in the full signal range, as shown in figure 39 . figure 39. source-to-drain charge injection vs source or drain voltage the drain-to-source charge injection becomes important when the device is used as a demultiplexer (demux), where d becomes the input and sx becomes the output. figure 40 shows the drain-to-source charge injection across the full signal range. figure 40. drain-to-source charge injection vs source or drain voltage 9.3.3 bidirectional operation the mux50x are operable as both a mux or demux. the source (sx, sxa, sxb) and drain (d, da, db) pins of the mux50x are used either as input or output. each mux50x channel has very similar characteristics in both directions. 9 6 3 0 3 6 9 15 10 5 0 5 10 15 charge injection (pc) drain voltage (v) c011 v dd = 12 v v ss = 0 v v dd = 10 v v ss = 10 v v dd = 15 v v ss = 15 v 2 1 0 1 2 15 10 5 0 5 10 15 charge injection (pc) source voltage (v) c025 v dd = 12 v v ss = 0 v v dd = 10 v v ss = 10 v v dd = 15 v v ss = 15 v
26 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated feature description (continued) 9.3.4 rail-to-rail operation a valid analog signal for the mux50x ranges from v ss to v dd . the input signal to the mux50x can swing from v ss to v dd without any significant degradation in performance. the on-resistance of the mux50x varies with input signal, as shown in figure 41 . figure 41. on-resistance vs source or drain voltage 9.4 device functional modes when the en pin of the mux50x is pulled high, one of the switches is closed based on the state of the address lines. when the en pin is pulled low, all the switches are in an open state irrespective of the state of the address lines. the en pin can be connected to v dd (as high as 36 v). 0 50 100 150 200 250 20 15 10 5 0 5 10 15 20 on resistance ( ? ) source or drain voltage (v) c001 v dd = 15 v v ss = 15 v v dd = 18 v v ss = 18 v v dd = 16.5 v v ss = 16.5 v v dd = 13.5 v v ss = 13.5 v
27 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 10 applications and implementation note information in the following applications sections is not part of the ti component specification, and ti does not warrant its accuracy or completeness. ti ? s customers are responsible for determining suitability of components for their purposes. customers should validate and test their design implementation to confirm system functionality. 10.1 application information the mux50x family offers outstanding input/output leakage currents and ultralow charge injection. these devices operate up to 36 v, and offer true rail-to-rail input and output. the on-capacitance of the mux50x is very low. these features makes the mux50x a precision, robust, high-performance analog multiplexer for high-voltage, industrial applications. 10.2 typical application figure 42 shows a 16-bit, differential, four-channel, multiplexed, data-acquisition system. this example is typical in industrial applications that require low distortion and a high-voltage differential input. the circuit uses the ads8864 , a 16-bit, 400-ksps successive-approximation-resistor (sar) analog-to-digital converter (adc), along with a precision, high-voltage, signal-conditioning front end, and a four-channel differential mux. this application example details the process for optimizing a precision, high-voltage, front-end drive circuit using the mux509, opa192 and opa140 to achieve excellent dynamic performance and linearity with the ads8864. figure 42. 16-bit precision multiplexed data-acquisition system for high-voltage inputs with lowest distortion 10.2.1 design requirements the primary objective is to design a 20 v, differential, four-channel, multiplexed, data-acquisition system with lowest distortion using the 16-bit ads8864 at a throughput of 400 ksps for a 10-khz, full-scale, pure, sine-wave input. the design requirements for this block design are: ? system supply voltage: 15 v ? adc supply voltage: 3.3 v ? adc sampling rate: 400 ksps ? adc reference voltage (refp): 4.096 v ? system input signal: a high-voltage differential input signal with a peak amplitude of 20 v and frequency (f in ) of 10 khz are applied to each differential input of the mux. ads8864 ref v inp v inm + + + charge kickback filter gain network gain network gain network gain network high-voltage level translation vcm high-voltage multiplexed input reference driver ref3140 rc filter opa350 rc filter analog inputs led photo detector bridge sensor thermocouple current sensing optical sensor opa192 opa192 opa140 mux509 copyright ? 2016, texas instruments incorporated
28 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated typical application (continued) 10.2.2 detailed design procedure the purpose of this precision design is to design an optimal, high-voltage, multiplexed, data-acquisition system for highest system linearity and fast settling. the overall system block diagram is illustrated in figure 42 . the circuit is a multichannel, data-acquisition signal chain consisting of an input low-pass filter, mux, mux output buffer, attenuating sar adc driver, and the reference driver. the architecture allows fast sampling of multiple channels using a single adc, providing a low-cost solution. this design systematically approaches each analog circuit block to achieve a 16-bit settling for a full-scale input stage voltage and linearity for a 10-khz sinusoidal input signal at each input channel. for step-by-step design procedure, circuit schematics, bill of materials, pcb files, simulation results, and test results, see ti precision design tipd151, 1 6-bit, 400-ksps, 4-channel multiplexed data-acquisition system for high-voltage inputs with lowest distortion . 10.2.3 application curve figure 43. adc 16-bit linearity error for the multiplexed data-acquisition block 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 20 15 10 5 0 5 10 15 20 integral non-linearity (lsb) adc differential peak-to-peak input (v) c030
29 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 11 power-supply recommendations the mux50x operates across a wide supply range of 5 v to 18 v (10 v to 36 v in single-supply mode). the mux508 and mux509 operate equally well with either dual supplies ( 5 v to 18 v), or a single supply (10 v to 36 v). they also perform well with unsymmetric supplies such as v dd = 12 v and v ss = ? 5 v. for reliable operation, use a supply decoupling capacitor with a capacitance between 0.1 f to 10 f at both the vdd and vss pins to ground. the on-resistance of the mux50x varies with supply voltage, as shown in figure 44 . figure 44. on-resistance variation with supply and input voltage 0 50 100 150 200 250 20 15 10 5 0 5 10 15 20 on resistance ( ? ) source or drain voltage (v) c001 v dd = 15 v v ss = 15 v v dd = 18 v v ss = 18 v v dd = 16.5 v v ss = 16.5 v v dd = 13.5 v v ss = 13.5 v
30 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 12 layout 12.1 layout guidelines figure 45 shows an example of a pcb layout with the mux508ipw, and figure 46 shows an example of a pcb layout with mux509ipw. the guidelines provided in this section are also applicable to the soic MUX508ID and mux509id package variants as well. some key considerations are: 1. decouple the vdd and vss pins with a 0.1- f capacitor, placed as close to the pin as possible. make sure that the capacitor voltage rating is sufficient for the v dd and v ss supplies. 2. keep the input lines as small as possible. for the mux509 differential signals, make sure the a inputs and b inputs are as symmetric as possible. 3. use a solid ground plane to help distribute heat and reduce electromagnetic interference (emi) noise pickup. 4. do not run sensitive analog traces in parallel with digital traces. avoid crossing digital and analog traces if possible and only make perpendicular crossings when necessary. 12.2 layout example figure 45. mux508ipw layout example figure 46. mux509ipw layout example a o en a 2 a 1 ao en v ss s 1 s 2 s 3 d a1 a 2 gnd v dd s 5 s 6 s 7 s 8 s 4 via to ground plane via to ground plane mux508ipw c c copyright ? 2016, texas instruments incorporated db a o en a 1 ao en v ss s 1a s 2a s 3a da a1 gnd v dd s 1b s 2b s 3b s 4b s 4a via to ground plane via to ground plane mux509 ipw c c copyright ? 2016, texas instruments incorporated
31 mux508 , mux509 www.ti.com sbas758c ? january 2016 ? revised september 2016 product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 13 device and documentation support 13.1 documentation support 13.1.1 related documentation ? ads866x 12-bit, 500-ksps, 4- and 8-channel, single-supply, sar adcs with bipolar input ranges (sbas492) ? opax140 high-precision, low-noise, rail-to-rail output, 11-mhz jfet op amp (sbos498) ? opax192 36-v, precision, rail-to-rail input/output, low offset voltage, low input bias current op amp with e-trim ? (sbos620) 13.2 related links table 3 lists quick access links. categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. table 3. related links parts product folder sample & buy technical documents tools & software support & community mux508 click here click here click here click here click here mux509 click here click here click here click here click here 13.3 receiving notification of documentation updates to receive notification of documentation updates, navigate to the device product folder on ti.com. in the upper right corner, click on alert me to register and receive a weekly digest of any product information that has changed. for change details, review the revision history included in any revised document. 13.4 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. design support ti's design support quickly find helpful e2e forums along with design support tools and contact information for technical support. 13.5 trademarks e2e is a trademark of texas instruments. all other trademarks are the property of their respective owners. 13.6 electrostatic discharge caution this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 13.7 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions.
32 mux508 , mux509 sbas758c ? january 2016 ? revised september 2016 www.ti.com product folder links: mux508 mux509 submit documentation feedback copyright ? 2016, texas instruments incorporated 14 mechanical, packaging, and orderable information the following pages include mechanical packaging and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation.
package option addendum www.ti.com 14-sep-2016 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples MUX508ID active soic d 16 40 green (rohs & no sb/br) cu sn level-2-260c-1 year -40 to 125 m36508d MUX508IDr active soic d 16 2500 green (rohs & no sb/br) cu sn level-2-260c-1 year -40 to 125 m36508d mux508ipw active tssop pw 16 90 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 125 mux508b mux508ipwr active tssop pw 16 2000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 125 mux508b mux509id active soic d 16 40 green (rohs & no sb/br) cu sn level-2-260c-1 year -40 to 125 m36509d mux509idr active soic d 16 2500 green (rohs & no sb/br) cu sn level-2-260c-1 year -40 to 125 m36509d mux509ipw active tssop pw 16 90 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 125 mux509c mux509ipwr active tssop pw 16 2000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 125 mux509c (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature.
package option addendum www.ti.com 14-sep-2016 addendum-page 2 (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant MUX508IDr soic d 16 2500 330.0 16.8 6.5 10.3 2.1 8.0 16.0 q1 mux508ipwr tssop pw 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 q1 mux509idr soic d 16 2500 330.0 16.8 6.5 10.3 2.1 8.0 16.0 q1 mux509ipwr tssop pw 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 q1 package materials information www.ti.com 11-sep-2016 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) MUX508IDr soic d 16 2500 366.0 364.0 50.0 mux508ipwr tssop pw 16 2000 367.0 367.0 35.0 mux509idr soic d 16 2500 366.0 364.0 50.0 mux509ipwr tssop pw 16 2000 367.0 367.0 35.0 package materials information www.ti.com 11-sep-2016 pack materials-page 2

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